Demonstration of finite-aperture tapered unstable resonator lasers
Identifieur interne : 00C113 ( Main/Repository ); précédent : 00C112; suivant : 00C114Demonstration of finite-aperture tapered unstable resonator lasers
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Abstract
In this letter, we report experimental results of semiconductor lasers that incorporate a mirror with finite lateral extent at the output of a semiconductor tapered laser in InAlGaAs/InGaAsP/InP. We directly compare the finite-aperture tapered unstable resonator laser to that of the conventional infinite-aperture tapered laser. Using the finite aperture, we show the differential quantum efficiency is increased by 40%. Additionally, the beam is coupled out of the laser cavity using a grating, allowing for a quasicircular, low-divergence beam with no external optics. © 2003 American Institute of Physics.
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University Boulevard, Tucson</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0350137</idno><date when="2003-08-04">2003-08-04</date><idno type="stanalyst">PASCAL 03-0350137 AIP</idno><idno type="RBID">Pascal:03-0350137</idno><idno type="wicri:Area/Main/Corpus">00CD52</idno><idno type="wicri:Area/Main/Repository">00C113</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser modes</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>4260B</term><term>4260F</term><term>4260D</term><term>8535B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Mode laser</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this letter, we report experimental results of semiconductor lasers that incorporate a mirror with finite lateral extent at the output of a semiconductor tapered laser in InAlGaAs/InGaAsP/InP. 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